BH GSO IEC 63275-1:2024
IEC 63275-1:2022
Bahraini Standard
Current Edition
·
Approved on
14 April 2024
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
BH GSO IEC 63275-1:2024 Files
English
25 Pages
Current Edition
Reference Language
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BH GSO IEC 63275-1:2024 Scope
IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).
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